DocumentCode
138273
Title
Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons
Author
Poljak, M. ; Wang, K.L. ; Suligoj, Tomislav
Author_Institution
Fac. of Electr. Eng. & Comput., Univ. of Zagreb, Zagreb, Croatia
fYear
2014
fDate
7-9 April 2014
Firstpage
37
Lastpage
40
Abstract
We report the results of a multi-scale transport modeling of ultra-narrow GNRs. Atomistic NEGF approach is combined with semiclassical mobility modeling in order to quantify the sensitivity of mobility to edge defects. We find that the mobility in defected GNRs deteriorates more strongly as GNR width is scaled down compared to ideal devices, and that even the minimum mobility variation spans almost one order of magnitude.
Keywords
carrier mobility; graphene; nanoribbons; nanosensors; noncrystalline defects; C; Edge Defects; atomistic NEGF approach; carrier mobility; defected graphene nanoribbon mobility; edge defects; graphene nanoribbon width; multiscale transport modeling; semiclassical mobility modeling; sensitivity analysis; ultranarrow graphene nanoribbons; Analytical models; Educational institutions; Graphene; Phonons; Photonic band gap; Scattering; Sensitivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on
Conference_Location
Stockholm
Type
conf
DOI
10.1109/ULIS.2014.6813900
Filename
6813900
Link To Document