Title :
Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons
Author :
Poljak, M. ; Wang, K.L. ; Suligoj, Tomislav
Author_Institution :
Fac. of Electr. Eng. & Comput., Univ. of Zagreb, Zagreb, Croatia
Abstract :
We report the results of a multi-scale transport modeling of ultra-narrow GNRs. Atomistic NEGF approach is combined with semiclassical mobility modeling in order to quantify the sensitivity of mobility to edge defects. We find that the mobility in defected GNRs deteriorates more strongly as GNR width is scaled down compared to ideal devices, and that even the minimum mobility variation spans almost one order of magnitude.
Keywords :
carrier mobility; graphene; nanoribbons; nanosensors; noncrystalline defects; C; Edge Defects; atomistic NEGF approach; carrier mobility; defected graphene nanoribbon mobility; edge defects; graphene nanoribbon width; multiscale transport modeling; semiclassical mobility modeling; sensitivity analysis; ultranarrow graphene nanoribbons; Analytical models; Educational institutions; Graphene; Phonons; Photonic band gap; Scattering; Sensitivity;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on
Conference_Location :
Stockholm
DOI :
10.1109/ULIS.2014.6813900
