DocumentCode
1382752
Title
Experimental and computer simulation analysis of a Gunn diode
Author
Ito, Yu ; Komizo, H. ; Meguro, Tomomi ; Daido, Yoshimasa ; Umebu, I.
Author_Institution
Fujitsu Labs. Ltd., Kawasaki, Japan
Volume
19
Issue
12
fYear
1971
Firstpage
900
Lastpage
905
Abstract
Bias-voltage and frequency dependencies of large signal electronic admittance of a Gunn diode have been measured systematically in the 8- to 13-GHz frequency range. The results were qualitatively verified by computer simulation. These results furnished information which was useful in the direct design of broad-band injection-locked oscillators and amplifiers. The results also gave a better understanding of irregular phenomena commonly observed in conventional oscillators.
Keywords
Gunn diodes; computer applications; electronics applications of computers; microwave devices; simulation; 8 to 13 GHz; Gunn diode; amplifiers; bias voltage dependence; broadband injection locked oscillators; computer simulation; dynamic behaviour; frequency dependencies; irregular phenomena; large signal electronic admittance; microwave devices; Admittance; Admittance measurement; Capacitance; Frequency measurement; Power generation; Radio frequency; Semiconductor diodes;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1971.6373338
Filename
6373338
Link To Document