Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions

In this work, we demonstrate the powerful methodology of electronic transport characterization in UTBB FD-SOI devices using cryogenic operation under interface coupling measurement condition. At first we study quantitatively the high-k/metal gate stack-induced transport behavior in long channel case, and, then we investigate the transport properties evolution in highly scaled devices. Mobility degradation in short devices is shown to stem from additional scattering mechanism, unlike long channel devices, which are attributed to process-induced defects near source and drain region.