High efficiency and high linearity InGaP/GaAs HBT power amplifiers: matching techniques of source and load impedance to improve phase distortion and linearity

Author

Iwai, Taisuke ; Ohara, Shiro ; Yamada, Hiroshi ; Yamaguchi, Yasuhiro ; Imanishi, Kenji ; Jeshin, K.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

45

Issue

6

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1196

Lastpage

1200

Abstract

This paper reports on a matching technique of the source and load impedance focused on a phase distortion of InGaP/GaAs HBT power amplifiers to simultaneously achieve a high efficiency and a high linearity performance. Load-pull measurements were done to maximize power added efficiency (PAE) and source pull measurements to minimize the phase distortion and adjacent channel leakage power (ACP). Our HBT exhibited a high PAE of 60.7% and an ACP at a 50 kHz offset frequency of -51 dBc for 1.5 GHz π/4-shift QPSK modulated signal with an output power (P_cut) of 31 dBm under a supply voltage of 3.5 V

Keywords

III-V semiconductors; UHF bipolar transistors; UHF power amplifiers; electric distortion; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; impedance matching; indium compounds; power bipolar transistors; 1.5 GHz; 3.5 V; 60.7 percent; HBT power amplifiers; InGaP-GaAs; adjacent channel leakage power; high efficiency; high linearity; linearity improvement; load impedance; load-pull measurements; matching techniques; phase distortion improvement; power added efficiency; source impedance; source pull measurements; Distortion measurement; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance; Linearity; Phase distortion; Phase measurement; Power measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.678510

Filename

678510