NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms

Author

Tallarico, Andrea Natale ; Magnone, Paolo ; Barletta, G. ; Magri, A. ; Sangiorgi, Enrico ; Fiegna, Claudio

Author_Institution

ARCES, Univ. of Bologna, Cesena, Italy

fYear

2014

fDate

7-9 April 2014

Firstpage

145

Lastpage

148

Abstract

In this paper, we present an analysis of the degradation mechanisms in p-channel power U-MOSFETs due to Negative Bias Temperature Instability (NBTI). In particular, we study the influence of NBTI on threshold voltage and trans-conductance, which are the main figures of merit affected by charges trapping in the bulk oxide and by an interface defects generation. At the end of the stress, a recovery phase is implemented in order to monitor permanent and recoverable degradation. Moreover, we investigate the influence of the overall channel area on the threshold voltage degradation and on device lifetime.

Keywords

power MOSFET; NBTI; bulk oxide; charge trapping; interface defect generation; negative bias temperature instability; p-channel power U-MOSFET; recovery phase mechanism; threshold voltage; threshold voltage degradation mechanism; transconductance influence; Degradation; Electric fields; Logic gates; MOSFET; Stress; Temperature measurement; Threshold voltage; Negative Bias Temeperature Instability; Trench-Gate MOSFET; U-MOSFET; channel area; interface states generation; oxide trapping/de-trapping charges; recovery mechanisms; stress conditions;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on

Conference_Location

Stockholm

Type

conf

DOI

10.1109/ULIS.2014.6813919

Filename

6813919