Title :
NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms
Author :
Tallarico, Andrea Natale ; Magnone, Paolo ; Barletta, G. ; Magri, A. ; Sangiorgi, Enrico ; Fiegna, Claudio
Author_Institution :
ARCES, Univ. of Bologna, Cesena, Italy
Abstract :
In this paper, we present an analysis of the degradation mechanisms in p-channel power U-MOSFETs due to Negative Bias Temperature Instability (NBTI). In particular, we study the influence of NBTI on threshold voltage and trans-conductance, which are the main figures of merit affected by charges trapping in the bulk oxide and by an interface defects generation. At the end of the stress, a recovery phase is implemented in order to monitor permanent and recoverable degradation. Moreover, we investigate the influence of the overall channel area on the threshold voltage degradation and on device lifetime.
Keywords :
power MOSFET; NBTI; bulk oxide; charge trapping; interface defect generation; negative bias temperature instability; p-channel power U-MOSFET; recovery phase mechanism; threshold voltage; threshold voltage degradation mechanism; transconductance influence; Degradation; Electric fields; Logic gates; MOSFET; Stress; Temperature measurement; Threshold voltage; Negative Bias Temeperature Instability; Trench-Gate MOSFET; U-MOSFET; channel area; interface states generation; oxide trapping/de-trapping charges; recovery mechanisms; stress conditions;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on
Conference_Location :
Stockholm
DOI :
10.1109/ULIS.2014.6813919
