Title :
Cu nanolines for application in RF interconnects
Author :
Sarafis, P. ; Benech, Ph ; Nassiopoulou, A.G.
Author_Institution :
NCSR Demokritos/IMEL, Athens, Greece
Abstract :
According to the ITRS the dimensions of the lower interconnect lines are expected to be reduced below 25nm for the years after 2014. In this work we investigate the properties of Cu nanolines in coplanar waveguide transmission line (CPW TLine) configuration for their potential use as RF interconnects in analog applications using the lower metal layers of the back-end-of-line (BEOL) CMOS processes. The Cu nanolines had a thickness of 100nm and a width ranging from 50nm to 1μm and they were patterned using electron beam lithography and lift-off. The nanolines were characterized in the frequency range 1-40 GHz. Extra attention was paid to the de-embedding procedure and the extraction of the properties of the intrinsic Cu nanoline. Finally, the results were compared with those obtained from electromagnetic simulations.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; coplanar transmission lines; coplanar waveguides; copper; electron beam lithography; integrated circuit interconnections; microwave integrated circuits; BEOL processes; CPW TLine configuration; Cu; ITRS; RF interconnects; analog applications; back-end-of-line CMOS processes; coplanar waveguide transmission line configuration; de-embedding procedure; electromagnetic simulations; electron beam lithography; frequency 1 GHz to 40 GHz; interconnect lines; intrinsic nanoline; lift-off; lower metal layers; size 100 nm; size 50 nm to 1 mum; Attenuation; Conductivity; Coplanar waveguides; Integrated circuit interconnections; Radio frequency; Silicon; Substrates; Copper; RF; co-planar waveguides; de-embedding; nanolines;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on
Conference_Location :
Stockholm
DOI :
10.1109/ULIS.2014.6813920
