A novel self-aligned bidirectional MIM diode with transparent junctions for AM-LCD´s

Author

Zhang, Shengdong ; Sin, Johnny K O

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

Volume

19

Issue

6

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

192

Lastpage

194

Abstract

A novel self-aligned bidirectional Metal-Insulator-Metal (MIM) diode with transparent junctions is proposed and fabricated. The MIM diode is formed by a combination of Ta/TaO/sub x//ITO/TaO/sub x//Ta. In this structure, both symmetrical and shift-free I-V characteristics are obtained. The symmetrical I-V characteristics are attributed to the excellent symmetry in the diode structure. The significant reduction of the shift in the I-V characteristics is a result of the removal of the charges captured by the traps in the TaO/sub x/ layers and at the interfaces between the TaO, and the electrodes during electrical stress. Only three masks are needed for the fabrication of the MIM diode pixel, which is as simple as the conventional approach. Moreover, the adoption of the lateral junction approach in the structure makes it possible to be used for high density MIM matrix implementation over large area substrates without the need of high-resolution patterning techniques.

Keywords

MIM devices; diodes; liquid crystal displays; metal-insulator boundaries; AM-LCD; I-V characteristics; Ta-TaO-ITO-TaO-Ta; Ta-TaO-InSnO-TaO-Ta; TaO/sub x/ layer traps; active matrix LCD; fabrication; high density MIM matrix implementation; large area substrates; lateral junction; self-aligned bidirectional MIM diode; transparent junctions; Diodes; Electrodes; Fabrication; Indium tin oxide; Liquid crystal displays; Metal-insulator structures; Silicon compounds; Stress; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.678540

Filename

678540