Conformal mapping based DC current model for double gate tunnel FETs

Author

Biswas, Arijit ; De Michielis, Luca ; Alper, Cem ; Ionescu, A.M.

Author_Institution

Nanoelectronic Devices Lab., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland

fYear

2014

fDate

7-9 April 2014

Firstpage

85

Lastpage

88

Abstract

In this work, the conformal mapping technique is applied to obtain an analytical closed form solution of the 2D Poisson´s equation for a double-gate Tunnel FET. The generated band profiles are accurate in all regions of device operation. Furthermore, the current levels are estimated by implementing the non-local band-to-band tunneling model from Synopsys Sentaurus TCAD. A good agreement with simulations for varying device parameters is demonstrated and the advantages and limitations of the new modeling approach are investigated and discussed.

Keywords

Poisson equation; field effect transistors; technology CAD (electronics); tunnel transistors; 2D Poisson equation; Synopsys Sentaurus TCAD; analytical closed form solution; band profiles; conformal mapping technique; current levels; dc current model; double gate tunnel FET; nonlocal band-to-band tunneling model; tunneling field effect transistors; varying device parameters; Conformal mapping; Doping; Electric potential; Field effect transistors; Logic gates; Semiconductor process modeling; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on

Conference_Location

Stockholm

Type

conf

DOI

10.1109/ULIS.2014.6813922

Filename

6813922