DocumentCode
1383087
Title
High-power 10-GHz operation of AlGaN HFET´s on insulating SiC
Author
Sullivan, G.J. ; Chen, M.Y. ; Higgins, J.A. ; Yang, J.W. ; Chen, Qian ; Pierson, R.L. ; McDermott, B.T.
Author_Institution
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
Volume
19
Issue
6
fYear
1998
fDate
6/1/1998 12:00:00 AM
Firstpage
198
Lastpage
200
Abstract
We report the first high-power RF characterization of AlGaN HFET´s fabricated on electrically insulating SiC substrates. A record total power of 2.3 W at 10 GHz was measured from a 1280-μm wide HFET at V/sub ds/=33 V. An excellent RF power density of 2.8 W/mm was measured on a 320-μm wide HFET. These values are a result of the high thermal conductivity of SiC, relative to the typical substrate, sapphire.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; silicon compounds; substrates; 10 GHz; 1280 micron; 2.3 W; 320 micron; AlGaN; AlGaN HFET; SiC; high-power RF characterization; high-power SHF operation; insulating SiC substrates; thermal conductivity; Aluminum gallium nitride; Density measurement; Dielectrics and electrical insulation; HEMTs; MODFETs; Radio frequency; Silicon carbide; Substrates; Thermal conductivity; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.678543
Filename
678543
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