Title :
Metal-ferroelectric-semiconductor (MFS) FET´s using LiNbO/sub 3//Si
Author_Institution :
Dept. of Semicond. Eng., Cheongju Univ., South Korea
fDate :
6/1/1998 12:00:00 AM
Abstract :
N-channel metal-ferroelectric-semiconductor field-effect-transistors (MFSFET´s) by using rapid thermal annealed LiNbO/sub 3//Si
Keywords :
dielectric polarisation; electron mobility; elemental semiconductors; ferroelectric storage; ferroelectric thin films; field effect transistors; hysteresis; lithium compounds; rapid thermal annealing; silicon; 0.16 mS/mm; I/sub D/-V/sub G/ characteristics; LiNbO/sub 3/ film; LiNbO/sub 3/-Si; LiNbO/sub 3//Si; MFS FET; NVM operations; field-effect electron mobility; field-effect-transistors; hysteresis loop; metal-ferroelectric-semiconductor FET; n-channel MFSFET; nonvolatile memory application; rapid thermal annealed structures; transconductance; Capacitors; FETs; Ferroelectric films; Ferroelectric materials; Interface states; Nonvolatile memory; Rapid thermal annealing; Semiconductor films; Substrates; Voltage;
Journal_Title :
Electron Device Letters, IEEE
