Title :
Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems
Author :
Kondo, Masao ; Oda, Katsuya ; Ohue, Eiji ; Shimamoto, Hiromi ; Tanabe, Masamichi ; Onai, Takahiro ; Washio, Katsuyoshi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
6/1/1998 12:00:00 AM
Abstract :
Ultra-low-power and high-speed SiGe base bipolar transistors that can be used in RF sections of multi-GHz telecommunication systems have been developed. The SiGe base and a poly-Si/SiGe base-contact were formed by selective growth in a self-aligned manner. The transistors have a very small base-collector capacitance (below 1 fF for an emitter area of 0.2×0.7 μm) and exhibit a high maximum oscillation frequency (30-70 GHz) at low current (5-100 μA). The power-delay product of an ECL ring oscillator is only 5.1 fJ/gate for a 250-mV voltage swing. The maximum toggle frequency of a one-eighth static divider is 4.7 GHz at a switching current of 68 μA/FF
Keywords :
Ge-Si alloys; UHF bipolar transistors; capacitance; heterojunction bipolar transistors; microwave bipolar transistors; mobile communication; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; 30 to 70 GHz; 4.7 GHz; 5 to 100 muA; ECL ring oscillator; SiGe; base-collector capacitance; bipolar transistors; emitter area; maximum oscillation frequency; multi-GHz telecommunication systems; power-delay product; selective epitaxial growth; self-aligned manner; static divider; switching current; toggle frequency; wireless telecommunication systems; Bipolar transistors; Circuits; Frequency conversion; Germanium silicon alloys; Parasitic capacitance; Radio frequency; Ring oscillators; Silicon germanium; Substrates; Wet etching;
Journal_Title :
Electron Devices, IEEE Transactions on
