DocumentCode
1383142
Title
Silicon MOS amplifier operation in the integrate and dump mode for gigahertz band lightwave communication systems
Author
Jindal, Renuka P.
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
Volume
8
Issue
7
fYear
1990
fDate
7/1/1990 12:00:00 AM
Firstpage
1023
Lastpage
1026
Abstract
The operation of a MOS amplifier in the integrate and dump mode is discussed. This mode of operation results in the suppression of the input load resistor noise while retaining the advantages of a large dynamic range and no equalization requirement. The technique is useful in improving the receiver sensitivity in circuit topologies such as the nonintegrating front. Several aspects of its MOS implementation are presented, along with test results
Keywords
metal-insulator-semiconductor structures; optical communication equipment; optical links; optical modulation; receivers; sensitivity; MOS amplifier; Si; circuit topologies; dump mode; gigahertz band lightwave communication systems; input load resistor noise; integrate mode; large dynamic range; noise suppression; nonintegrating front; receiver sensitivity; Circuit noise; Circuit topology; Dynamic range; Operational amplifiers; Optical amplifiers; Optical pulses; Photodiodes; Preamplifiers; Resistors; Silicon;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.56401
Filename
56401
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