Practical accuracy analysis of some existing effective channel length and series resistance extraction methods for MOSFET´s

Author

Biesemans, Serge ; Hendriks, Marton ; Kubicek, Stefan ; De Meyer, Kristin

Author_Institution

IMEC, Leuven, Belgium

Volume

45

Issue

6

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1310

Lastpage

1316

Abstract

A method to analyze the accuracy of the extracted values for the channel length (L_eff) and series resistance (R_s) of MOSFET devices is presented. The analysis is based on a statistical argument being the variance σ of the extracted results. This variance is found to be a good measure for the accuracy of the particular extraction method used. It is shown that, in the case of deep submicron technologies, errors as large as 200 nm for ΔL can be made for these extraction methods depending on the process design and the process control. The use of a single transistor method is suggested as a possible solution to the low accuracy of the L-array methods

Keywords

MOSFET; electric resistance; semiconductor device models; statistical analysis; MOSFET; deep submicron technologies; effective channel length; process control; process design; series resistance extraction; single transistor method; statistical argument; Analysis of variance; Data mining; Electrical resistance measurement; Error correction; Helium; MOSFET circuits; Monitoring; Particle measurements; Process control; Process design;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.678555

Filename

678555