A front-gate charge-pumping method for probing both interfaces in SOI devices

Author

Li, Yujun ; Ma, T.P.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

Volume

45

Issue

6

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1329

Lastpage

1335

Abstract

A simple front-gate charge pumping technique has been developed, which enables the measurement of interface traps at both the front and the back interfaces of a fully depleted (FD) SOI/MOSFET. It is based on the strong coupling between the two interfaces, and its validity has been verified both experimentally and by computer simulation. Experiments have been performed on both SOI/MOSFET´s and SOI/PMOSFET´s. This front-gate charge pumping technique is then utilized to study the hot-carrier induced degradation in SOI/NMOSFET´s. It has been found that the back channel is physically damaged after front-channel hot-carrier injection. Front-gate Fowler-Nordheim (FN) injection has been found to cause damage at the front interface only

Keywords

MOSFET; electron traps; hot carriers; semiconductor device models; semiconductor device reliability; silicon-on-insulator; SOI devices; computer simulation; front-gate Fowler-Nordheim injection; front-gate charge-pumping method; fully depleted SOI/MOSFET; hot-carrier induced degradation; interface traps; Charge measurement; Charge pumps; Computer simulation; Current measurement; Hot carriers; MOSFET circuits; Pulse measurements; Semiconductor device measurement; Semiconductor films; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.678565

Filename

678565