Self-consistent 2-D model for quantum effects in n-MOS transistors

Author

Spinelli, Alessandro S. ; Benvenuti, Augusto ; Pacelli, Andrea

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

45

Issue

6

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

1342

Lastpage

1349

Abstract

We present a self-consistent two-dimensional (2-D) model for carrier quantization effects in the channel of highly-doped n-MOSFET´s. Quantization is taken into account inside a box region surrounding the inversion channel. The proposed approach extends previously proposed one-dimensional (1-D) schemes allowing one to estimate the quantum mechanical (QM) effects on the device current. Good convergence properties are achieved exploiting the effective intrinsic density concept. The simulator has been applied to MOS devices with different peak channel doping, resulting in an improved description of the device behavior

Keywords

MOSFET; doping profiles; inversion layers; quantisation (quantum theory); semiconductor device models; box region; carrier quantization effects; convergence properties; device behavior; intrinsic density concept; inversion channel; nMOS transistors; peak channel doping; quantum mechanical effects; self-consistent 2D model; Capacitance; Convergence; Doping; Electrons; MOS devices; Potential well; Quantization; Quantum mechanics; Threshold voltage; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.678567

Filename

678567