DocumentCode
1383364
Title
Analytical model for the surface field distribution of SOI RESURF devices
Author
Chung, Sang-Koo ; Han, Seung-Youp
Author_Institution
Sch. of Electr. & Electron. Eng., Ajou Univ., Suwon, South Korea
Volume
45
Issue
6
fYear
1998
fDate
6/1/1998 12:00:00 AM
Firstpage
1374
Lastpage
1376
Abstract
An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the lengths of the gate and drain field plate, the thicknesses of the gate and buried oxide, and the applied voltages. Numerical simulations support the analytical results
Keywords
MOSFET; doping profiles; electric breakdown; electric fields; semiconductor device models; semiconductor device reliability; silicon-on-insulator; MOSFETs; SOI RESURF devices; analytical model; buried oxide; doping concentration; drain field plate; gate thickness; semiconductor surface; surface field distribution; Analytical models; Dielectric constant; Dielectric measurements; Numerical simulation; Position measurement; Semiconductor diodes; Semiconductor films; Silicon on insulator technology; Thickness measurement; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.678582
Filename
678582
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