DocumentCode
1383383
Title
On the “Effect of diffusion and modulated frequency in an ion-implanted OPFET” [correction]
Author
Asthana, N.C. ; Singh, Surendra
Author_Institution
Dept. of Phys., U.P. Coll., Varanasi, India
Volume
45
Issue
6
fYear
1998
fDate
6/1/1998 12:00:00 AM
Firstpage
1383
Abstract
There is a mathematical error by Singh et al. in the solution of the differential equation for the photogenerated carriers in considering the effect of diffusion and modulated frequencies in an ion-implanted OPFET. Correction of the error will lead to different results for the changes in the device characteristics
Keywords
Schottky gate field effect transistors; differential equations; diffusion; ion implantation; phototransistors; semiconductor device models; device characteristics; differential equation; diffusion; ion-implanted OPFET; modulated frequency; photo-MESFET; photogenerated carriers; Absorption; Algebra; Boundary conditions; Differential equations; Error correction; Frequency modulation; MESFETs; Optical devices; Optical modulation; Physics;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.678585
Filename
678585
Link To Document