Title :
Intersubband χ3 in coupled InGaAs-AlGaAs multiple quantum wells
Author :
Rabinovich, W.S. ; Beadie, G. ; Katzer, D.S.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
6/1/1998 12:00:00 AM
Abstract :
The third-order nonlinearity, χ3(ω,ω,-ω), is measured for a mid-infrared intersubband transition in strained InGaAs-AlGaAs multiple quantum wells (MQW´s). The high conduction band offset of this system allows an intersubband transition at 3.1 μm. The level structure of the quantum well is designed to include a meta-stable trapping level, resulting in a peak saturation intensity of 6 MW/cm2 at Brewster´s angle, approximately 20 times lower than would be found in a square quantum well with similar linewidth. A near-resonant n2 of 8.4×10-7 cm2/W at 3.1 μm is calculated. The off-resonant n2 is also calculated and shown to be attractive at wavelengths as short as 1.55 μm
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; indium compounds; nonlinear optics; resonant states; semiconductor quantum wells; spectral line breadth; 1.55 mum; 3.1 mum; Brewster´s angle; InGaAs-AlGaAs; coupled InGaAs-AlGaAs multiple quantum wells; high conduction band offset; intersubband χ3; intersubband transition; level structure; linewidth; meta-stable trapping level; mid-infrared intersubband transition; near-resonant; off-resonant; peak saturation intensity; square quantum well; strained InGaAs-AlGaAs multiple quantum wells; third-order nonlinearity; Electromagnetic wave absorption; Laser mode locking; Laser theory; Laser transitions; Nonlinear optics; Optical materials; Optical refraction; Optical saturation; Quantum well devices; Resonance;
Journal_Title :
Quantum Electronics, IEEE Journal of
