• DocumentCode
    1383469
  • Title

    Effect of crystal orientation on lapping and polishing processes of natural quartz

  • Author

    Guzzo, Pedro L. ; De Mello, José Daniel B

  • Author_Institution
    Dept. de Ciencias Fisicas, Univ. Fed. de Uberlandia, Brazil
  • Volume
    47
  • Issue
    5
  • fYear
    2000
  • Firstpage
    1217
  • Lastpage
    1227
  • Abstract
    Lapping and polishing processes of natural quartz are investigated in relation to crystallographic orientation and applied normal stress. Weight loss measurements and surface profilometry were carried out in X-, Y-, Z-, and AT-cut samples. The relationship found between material removal rate and stress depends on specimen orientation. Based on indentation fracture mechanics, this behavior is discussed in relation to fracture toughness and scratch hardness anisotropy of quartz crystals. Scanning electron microscopy (SEM) shows that brittle microcracking is the primary mechanism involved with material removal in the lapping process. Plastic deformation mechanisms begin to operate on lapped and polished surfaces above a certain value of stress. Surface profiles and SEM micrographs show that the roughness of lapped surfaces decreases with increasing normal stress, but an opposite behavior is observed in polished surfaces.
  • Keywords
    abrasion; crystal orientation; polishing; quartz; SiO/sub 2/; abrasive wear; brittle microcracking; crystallographic orientation; fracture toughness; indentation fracture mechanics; lapping; material removal rate; natural quartz crystal; normal stress; plastic deformation; polishing; scanning electron microscopy; scratch hardness anisotropy; surface profilometry; surface roughness; weight loss; Crystalline materials; Crystallography; Lapping; Loss measurement; Rough surfaces; Scanning electron microscopy; Stress; Surface cracks; Surface roughness; Weight measurement;
  • fLanguage
    English
  • Journal_Title
    Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-3010
  • Type

    jour

  • DOI
    10.1109/58.869068
  • Filename
    869068