DocumentCode :
1383742
Title :
High-Performance GaN MOSFET With High- 
Gate Diele
Author :
Tsai, C.Y. ; Wu, T.L. ; Chin, Albert
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
33
Issue :
1
fYear :
2012
Firstpage :
35
Lastpage :
37
Abstract :
Using a high-κ LaAlO3/SiO2 gate dielectric, the recessed-gate GaN MOSFET has a low threshold voltage (Vt) of 0.1 V, low on-resistance (Ron) of 13.5 Ω·mm, high breakdown voltage of 385 V, high transconductance (gm) of 136 mS/mm, and record-best normalized drive current (μCox) of 172 μA/V2. Such excellent device integrity is due to the small capacitance equivalent thickness of 3.0 nm, using a high-κ gate dielectric and recessed-gate etching.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; etching; gallium compounds; lanthanum compounds; low-power electronics; silicon compounds; GaN; LaAlO3-SiO2; device integrity; high-κ gate dielectric; recessed-gate MOSFET; recessed-gate etching; resistance 13.5 ohm; size 3 nm; voltage 0.1 V; voltage 385 V; Aluminum gallium nitride; Dielectrics; Electron devices; Gallium nitride; Logic gates; MOSFET circuits; Silicon; $hbox{LaAlO}_{3}$ $kappa$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2172911
Filename :
6087370
Link To Document :
