• DocumentCode
    1383742
  • Title

    High-Performance GaN MOSFET With High- \\kappa \\hbox {LaAlO}_{3}/\\hbox {SiO}_{2} Gate Diele

  • Author

    Tsai, C.Y. ; Wu, T.L. ; Chin, Albert

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    33
  • Issue
    1
  • fYear
    2012
  • Firstpage
    35
  • Lastpage
    37
  • Abstract
    Using a high-κ LaAlO3/SiO2 gate dielectric, the recessed-gate GaN MOSFET has a low threshold voltage (Vt) of 0.1 V, low on-resistance (Ron) of 13.5 Ω·mm, high breakdown voltage of 385 V, high transconductance (gm) of 136 mS/mm, and record-best normalized drive current (μCox) of 172 μA/V2. Such excellent device integrity is due to the small capacitance equivalent thickness of 3.0 nm, using a high-κ gate dielectric and recessed-gate etching.
  • Keywords
    III-V semiconductors; MOSFET; aluminium compounds; etching; gallium compounds; lanthanum compounds; low-power electronics; silicon compounds; GaN; LaAlO3-SiO2; device integrity; high-κ gate dielectric; recessed-gate MOSFET; recessed-gate etching; resistance 13.5 ohm; size 3 nm; voltage 0.1 V; voltage 385 V; Aluminum gallium nitride; Dielectrics; Electron devices; Gallium nitride; Logic gates; MOSFET circuits; Silicon; $hbox{LaAlO}_{3}$; GaN; MOSFET; high $kappa$;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2172911
  • Filename
    6087370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1383742