DocumentCode
1383820
Title
A 
- 
/GaN Hetero-Structured Solar-Blind and Visible-Blind Dua
Author
Weng, W.Y. ; Hsueh, T.J. ; Chang, S.J. ; Huang, G.J. ; Hsueh, H.T.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
11
Issue
6
fYear
2011
fDate
6/1/2011 12:00:00 AM
Firstpage
1491
Lastpage
1492
Abstract
The authors report the fabrication of a β-Ga2O3/GaN solar-blind and visible-blind dual-band photodetector (PD). It was found that we could control the depletion depth of the device and thus switch the operation mode between solar-blind and visible-blind by simply changing the applied bias. It was also found that we could achieve a deep-UV to near-UV contrast ratio of 4.6 × 103 when the device was biased at 1 V. Furthermore, it was found that near-UV to visible contrast ratio of the fabricated β-Ga2O3/GaN PD was 8.5 × 102 when biased at 10 V.
Keywords
III-V semiconductors; gallium compounds; photodetectors; ultraviolet detectors; wide band gap semiconductors; Ga2O3-GaN; PD; deep-UV contrast ratio; hetero-structured solar-blind photodetector; near-UV contrast ratio; visible-blind dual-band photodetector; voltage 10 V; Absorption; Current measurement; Dual band; Furnaces; Gallium nitride; Photodetectors; $beta$ - ${rm Ga}_{2} {rm O} _{3}$ ; GaN; UV photodetectors; dual-band;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2010.2093880
Filename
5640631
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