Effects of Different Annealing Gases on Pentacene OTFT With HfLaO Gate Dielectric

Author

Deng, L.F. ; Lai, P.T. ; Chen, W.B. ; Xu, J.P. ; Liu, Y.R. ; Choi, H.W. ; Che, C.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China

Volume

32

Issue

1

fYear

2011

Firstpage

93

Lastpage

95

Abstract

Pentacene organic thin-film transistors (OTFTs) with HfLaO high-κ gate dielectric were fabricated. The dielectric was prepared by a sputtering method and then annealed in N₂, NH₃, O₂, or NO at 400 °C. The carrier mobility of the NH₃-annealed OTFT could reach 0.59 cm²/V · s, which is higher than those of the other three devices. Moreover, the NH₃-annealed OTFT obtained the smallest subthreshold swing of 0.26 V/dec among them. Furthermore, 1/f noise measurement indicated that the NH₃-annealed OTFT achieved the smallest 1/f noise. All these should be attributed to the improved interface between the gate dielectric and the organic semiconductor associated with the passivation effects of the NH₃ annealing on the dielectric surface.

Keywords

1/f noise; annealing; carrier mobility; hafnium compounds; high-k dielectric thin films; lanthanum compounds; organic semiconductors; passivation; semiconductor thin films; sputtering; thin film transistors; 1/f noise measurement; HfLaO; NH₃; annealing gases; carrier mobility; dielectric surface; high-κ gate dielectric; organic semiconductor; passivation effect; pentacene OTFT; pentacene organic thin-film transistor; sputtering method; temperature 400 C; Annealing; Dielectrics; Hafnium compounds; Logic gates; Noise; Organic thin film transistors; $ hbox{1}/f$ noise; Dielectric; high-$kappa$; organic thin-film transistor (OTFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2087314

Filename

5640640