Title :
Combined Effects of Shunt and Luminescence Coupling on External Quantum Efficiency Measurements of Multijunction Solar Cells
Author :
Li, Jing-Jing ; Lim, Swee Hoe ; Allen, Charles R. ; Ding, Ding ; Zhang, Yong-Hang
Author_Institution :
Center for Photonics Innovation, Arizona State Univ., Tempe, AZ, USA
Abstract :
The combined effects of shunt and luminescence coupling on the measurement artifact of external quantum efficiency (EQE) of multi-junction solar cells are studied. The EQE measurement artifact is modeled using DC and small-signal equivalent circuits under voltage and light bias conditions. The modeling results are verified with EQE measurements of a Ge bottom cell of a triple-junction solar cell. It is found that the optimal bias light intensity to minimize the EQE measurement artifact is the result of the tradeoff between the shunt and the luminescence coupling effects.
Keywords :
elemental semiconductors; equivalent circuits; germanium; luminescence; solar cells; DC circuits; EQE measurement artifact; Ge; Ge bottom cell; external quantum efficiency measurements; light bias conditions; luminescence coupling; multijunction solar cells; optimal bias light intensity; shunt coupling; small-signal equivalent circuits; triple-junction solar cell; voltage bias conditions; Electrical resistance measurement; Indium gallium arsenide; Luminescence; Photovoltaic cells; Quantum mechanics; Solar cells; Voltage measurement; Luminescence coupling; multi-junction solar cells; quantum efficiency; shunt;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2011.2172188
