Title :
Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Zinc-Oxide Colloidal Nanoparticles
Author :
Qin, Liqiao ; Shing, Christopher ; Sawyer, Shayla
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Metal-semiconductor-metal ultraviolet (UV) photodetectors were created with zinc-oxide colloidal nanoparticles coated with polyvinyl-alcohol. Gold-interdigitated finger contacts with different parameters were patterned on the nanoparticles by optical lithography. The photodetectors exhibited UV-photogenerated current to dark current ratios ranging from 3.85 × 106 to 1.34 × 108, depending on the finger parameters. The spectral responses demonstrate a 375 nm cutoff wavelength, with a peak responsivity of 731.42 A/W at 345 nm.
Keywords :
II-VI semiconductors; metal-semiconductor-metal structures; nanocontacts; nanoparticles; nanosensors; photodetectors; photolithography; ultraviolet detectors; wide band gap semiconductors; zinc compounds; dark current ratios; gold interdigitated finger contacts; metal semiconductor metal ultraviolet photodetectors; optical lithography; peak responsivity; photodetectors exhibited UV-photogenerated current; polyvinylalcohol; spectral responses; zinc oxide colloidal nanoparticles; Dark current; Gold; Lithography; Nanoparticles; Optical device fabrication; Photodetectors; Zinc oxide; Metal–semiconductor–metal (MSM) ultraviolet (UV) photodetector; optical lithography; polyvinyl-alcohol (PVA); top-down wet-chemical etching; zinc-oxide (ZnO) nanoparticles;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2089598
