Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

Author

Jiang, Jie ; Sun, Jia ; Dou, Wei ; Wan, Qing

Author_Institution

Ningbo Inst. of Mater. Technol. & Eng., Ningbo, China

Volume

33

Issue

1

fYear

2012

Firstpage

65

Lastpage

67

Abstract

Junctionless flexible oxide-based electric-double-layer thin-film transistors (TFTs) are fabricated on paper substrates at room temperature. Channel and source/drain electrodes are realized by an indium-tin-oxide (ITO) film without any source/drain junction. Effective field-effect modulation of drain current can be obtained when the thickness of the top ITO film is decreased to 20 nm. These junctionless paper TFTs show a good device performance with a small subthreshold swing of 0.21 V/dec and a large on/off ratio of 2 ×10⁶. Such junctionless paper TFTs can provide a new opportunity for flexible paper electronics and low-cost portable-sensor applications.

Keywords

electrochemistry; flexible electronics; paper; substrates; thin film transistors; channel electrodes; electric-double-layer thin-film transistors; field-effect modulation; flexible paper electronics; junctionless flexible oxide-based thin-film transistors; low-cost portable-sensor applications; paper substrates; source-drain electrodes; Conductivity; Indium tin oxide; Logic gates; Performance evaluation; Substrates; Thin film transistors; Electric double layer (EDL); flexible paper electronics; junctionless thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2172973

Filename

6087999