Title :
Transport in Graphene: Studying Layers of BN, SiC, and SiO2
Author_Institution :
Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
Abstract :
We will examine the mobility and high-field velocity in graphene placed upon various substrates, such as boron nitride (BN), silicon carbide (SiC), or silicon dioxide (SiO2). The transport is subject to the intrinsic phonons in graphene as well as flexural modes, but it is the remote polar modes from the substrate and impurities sited between the substrate layer and graphene that dominate the mobility and velocity.
Keywords :
bending; carrier mobility; graphene; phonon-impurity interactions; BN; C; SiC; SiO2; boron nitride substrate; flexural modes; graphene; high-field velocity; impurities; intrinsic phonons; mobility; remote polar modes; silicon carbide substrate; silicon dioxide substrate; substrate layer; transport properties; Charge carrier density; Graphene; Impurities; Phonons; Scattering; Silicon carbide; Substrates;
Journal_Title :
Nanotechnology Magazine, IEEE
DOI :
10.1109/MNANO.2012.2220233
