Electrical Instability of the a-Si:H TFTs Fabricated by Maskless Laser-Write Lithography on a Spherical Surface

Author

Yoo, Geonwook ; Radtke, Daniela ; Baek, Gwanghyeon ; Zeitner, Uwe D. ; Kanicki, Jerzy

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

Volume

58

Issue

1

fYear

2011

Firstpage

160

Lastpage

164

Abstract

We fabricated and characterized hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with a channel length of 10 on both spherical and flat surfaces using maskless laser-write lithography (LWL). In addition to the electrical performance, the threshold voltage shift of the a-Si:H TFT under bias-temperature stress is investigated and discussed in comparison to a device fabricated on a flat surface. The obtained results show that the a-Si:H TFTs fabricated by LWL method on a curved surface are suitable for pixel switches and circuits, which are needed to realize image sensor arrays and/or displays on a nonplanar surface.

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; laser beam applications; photolithography; silicon; thin film transistors; LWL method; Si:H; a-Si:H TFT; electrical instability; flat surface; hydrogenated amorphous silicon thin film transistor; image sensor array; maskless laser-write lithography; size 10 mum; spherical surface; Pixel; Stress; Substrates; Surface treatment; Thin film transistors; Threshold voltage; Amorphous silicon (a-Si); maskless laser-write lithography (LWL); nonplanar surface; thin-film transistor (TFT); threshold voltage shift;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2088403

Filename

5640665