DocumentCode
1384156
Title
Electronically switchable bulk acoustic wave resonator based on paraelectric state ferroelectric films
Author
Kozyrev, A.B. ; Mikhaylov, A.K. ; Ptashnik, S.V. ; Zinoviev, S.V. ; Petrov, P.K. ; Alford, N McN ; Wang, Tao
Author_Institution
Dept. of Phys. Electron. & Technol., St.-Petersburg State Electrotech. Univ., St. Petersburg, Russia
Volume
47
Issue
24
fYear
2011
Firstpage
1326
Lastpage
1327
Abstract
The electromechanical properties of multilayer microwave capacitance structures with two ferroelectric films in the paraelectric state are analysed. A film bulk acoustic wave resonator (FBAR) with about two times (approximately octave) resonance frequency switching is demonstrated. The switching phenomenon is due to the application of a unidirectional or oppositely directed DC control E-field to ferroelectric layers that results in the excitation of different acoustic eigenmodes in the resonator structure.
Keywords
acoustic resonators; bulk acoustic wave devices; ferroelectric materials; ferroelectric thin films; acoustic eigenmode; electromechanical property; electronically switchable bulk acoustic wave resonator; film bulk acoustic wave resonator; multilayer microwave capacitance structure; paraelectric state ferroelectric film; resonance frequency switching; resonator structure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.3006
Filename
6088046
Link To Document