DocumentCode :
1384203
Title :
Carrier transport and its variation of laser-lateral-crystallised poly-Si TFTs
Author :
Kuroki, Shin-Ichiro ; Fujii, Shohei ; Kotani, Koji ; Ito, Takao
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
Volume :
47
Issue :
24
fYear :
2011
Firstpage :
1336
Lastpage :
1338
Abstract :
Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.
Keywords :
electron mobility; thin film transistors; CLC poly-Si TFT; carrier transport; continuous-wave laser lateral-crystallised poly-Si thin film transistors; electron mobility; laser-lateral-crystallised poly-Si TFT;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2011.2854
Filename :
6088053
Link To Document :
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