DocumentCode :
1384216
Title :
High-power edge-emitting laser diode with narrow vertical beam divergence
Author :
Ledentsov, Nikolay N. ; Shchukin, Vitaly A. ; Novikov, I.I. ; Gordeev, N.Yu. ; Maximov, M.V. ; Shernyakov, Y.M. ; Pausov, A.S. ; Posilovic, K. ; Kettler, T. ; Bimberg, Dieter ; Bugge, F. ; Weyers, M.
Author_Institution :
PBC Lasers GmbH, Berlin, Germany
Volume :
47
Issue :
24
fYear :
2011
Firstpage :
1339
Lastpage :
1341
Abstract :
10.5 W pulsed optical power with ultra-narrow vertical beam divergence (full width at full maximum ~1.1°) is achieved at 20 A pulsed current in a 1060 nm laser diode with as-cleaved facets (100 m-wide and 3500 μm-long cavity). The lasing occurs through the tilted wave mode excited in the GaAs substrate. Temperature-stable operation at low threshold current densities is demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor lasers; GaAs; current 20 A; high-power edge-emitting laser diode; low threshold current densities; narrow vertical beam divergence; power 10.5 W; pulsed optical power; temperature-stable operation; wavelength 1060 nm;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2011.3266
Filename :
6088055
Link To Document :
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