Title :
Single spatial mode 3 μm diode lasers with continuous-wave output power of 15 mW at room temperature
Author :
Hosoda, T. ; Kipshidze, G. ; Shterengas, L. ; Belenky, G.
Author_Institution :
State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Abstract :
Single spatial mode GaSb-based type-I quantum well diode lasers with 3 μm emission and continuous-wave output power above 15 mW at room temperature are reported. The devices with 5.5 μm-wide ridge waveguides were fabricated by selective wet etching technique.
Keywords :
III-V semiconductors; etching; gallium compounds; laser modes; optical waveguides; quantum well lasers; ridge waveguides; GaSb; power 15 mW; ridge waveguides; selective wet etching; single spatial mode diode lasers; size 5.5 mum; temperature 293 K to 298 K; type-I quantum well diode lasers; wavelength 3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.3268
