Title :
A 0.5-V 0.4–2.24-GHz Inductorless Phase-Locked Loop in a System-on-Chip
Author :
Cheng, Kuo-Hsing ; Tsai, Yu-Chang ; Lo, Yu-Lung ; Huang, Jing-Shiuan
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fDate :
5/1/2011 12:00:00 AM
Abstract :
A phase-locked loop (PLL) is proposed for low-voltage applications. A new charge pump (CP) circuit, using gate switches affords low leakage current and high speed operation. A low-voltage voltage-controlled oscillator (LV-VCO) composed of 4-stage delay cells and a low-voltage segmented current mirror (LV-SCM) achieves low voltage-controlled oscillator gain (KVCO), a wide tuning range, and good linearity. A LV-SCM generates more current with small area by switching the body rather than the gate. The PLL is implemented in standard 90-nm CMOS with regular VT (RVT) devices. Its output jitter is 2.22 ps (rms), which is less than 0.5% of the output period. The phase noise is - 87 dBc/Hz at 1-MHz offset from a 2.24-GHz center frequency. Total power dissipation at 2.24-GHz output frequency, and with 0.5-V power supply is 2.08 mW (excluding the buffers). The core area is 0.074 mm2.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF oscillators; charge pump circuits; current mirrors; phase locked loops; phase noise; switches; system-on-chip; voltage-controlled oscillators; 4-stage delay cells; CMOS process; LV-SCM; LV-VCO; PLL; charge pump circuit; frequency 0.4 GHz to 2.24 GHz; gate switches; inductorless phase-locked loop; low leakage current; low-voltage segmented current mirror; low-voltage voltage-controlled oscillator; phase noise; power 2.08 mW; size 90 nm; system-on-chip; time 2.22 ps; total power dissipation; voltage 0.5 V; Delay; Leakage current; Logic gates; Noise; Phase locked loops; System-on-a-chip; Voltage-controlled oscillators; Charge pump (CP); low-voltage segmented current mirror (LV-SCM); multi-phase VCO; phase-locked loop (PLL); system-on-chips (SoCs);
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2010.2089559