• DocumentCode
    1384257
  • Title

    Raman amplification in GaP-AlxGa1-xP waveguides for light frequency discrimination

  • Author

    Suto, K. ; Kimura, T. ; Saito, T. ; Nishizawa, J.

  • Author_Institution
    Semicond. Res. Inst., Sendai, Japan
  • Volume
    145
  • Issue
    2
  • fYear
    1998
  • fDate
    4/1/1998 12:00:00 AM
  • Firstpage
    105
  • Lastpage
    108
  • Abstract
    Raman amplification characteristics of the GaP-AlxGa 1-xP heterostructure waveguide have been measured by fine tuning the pump light frequency. The Raman gain and the Raman gain bandwidth are 0.03×10-6 W-1 cm-1 and 23.5 GHz, respectively. The amplified signal light can be detected even at the pump light power level of 10 mW. This result shows that the semiconductor Raman amplifier is suitable for demodulators based on light frequency discrimination in wideband optical communication systems
  • Keywords
    III-V semiconductors; Raman lasers; aluminium compounds; demodulators; gallium compounds; optical communication equipment; optical transmitters; semiconductor lasers; waveguide lasers; 10 mW; 23.5 GHz; GaP-AlxGa1-xP waveguides; GaP-AlGaP; Raman amplification; Raman gain; Raman gain bandwidth; amplified signal light; demodulators; fine tuning; heterostructure waveguide; light frequency discrimination; pump light frequency; pump light power level; semiconductor Raman amplifier; wideband optical communication systems;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:19981555
  • Filename
    678943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1384257