Title :
Raman amplification in GaP-AlxGa1-xP waveguides for light frequency discrimination
Author :
Suto, K. ; Kimura, T. ; Saito, T. ; Nishizawa, J.
Author_Institution :
Semicond. Res. Inst., Sendai, Japan
fDate :
4/1/1998 12:00:00 AM
Abstract :
Raman amplification characteristics of the GaP-AlxGa 1-xP heterostructure waveguide have been measured by fine tuning the pump light frequency. The Raman gain and the Raman gain bandwidth are 0.03×10-6 W-1 cm-1 and 23.5 GHz, respectively. The amplified signal light can be detected even at the pump light power level of 10 mW. This result shows that the semiconductor Raman amplifier is suitable for demodulators based on light frequency discrimination in wideband optical communication systems
Keywords :
III-V semiconductors; Raman lasers; aluminium compounds; demodulators; gallium compounds; optical communication equipment; optical transmitters; semiconductor lasers; waveguide lasers; 10 mW; 23.5 GHz; GaP-AlxGa1-xP waveguides; GaP-AlGaP; Raman amplification; Raman gain; Raman gain bandwidth; amplified signal light; demodulators; fine tuning; heterostructure waveguide; light frequency discrimination; pump light frequency; pump light power level; semiconductor Raman amplifier; wideband optical communication systems;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19981555
