DocumentCode
1384431
Title
Theory of hot carrier effects on nonlinear gain in GaAs-GaAlAs lasers and amplifiers
Author
Gomatam, Badri N. ; DeFonzo, Alfred P.
Author_Institution
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Volume
26
Issue
10
fYear
1990
fDate
10/1/1990 12:00:00 AM
Firstpage
1689
Lastpage
1704
Abstract
A concise and straightforward model of nonlinear grain based on the carrier heating effect in semiconductor lasers is presented. The problem is formulated using the density matrix approach and includes a priori the effect of free-carrier absorption. Coupled field-medium equations involving photon densities, carrier densities, and carrier temperatures are derived using the results of the density matrix method. The propagation of ultrashort pulses in laser amplifiers is studied and a qualitatively new model along with results on the transient gain recovery dynamics are presented. The model accounts for the wavelength dependence of the asymmetric part of the nonlinear gain observed in direct mixing experiments observed in semiconductor lasers
Keywords
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high-speed optical techniques; hot carriers; laser theory; nonlinear optics; semiconductor device models; semiconductor junction lasers; GaAs-GaAlAs lasers; carrier densities; carrier heating effect; carrier temperatures; coupled field medium equations; density matrix approach; direct mixing experiments; free-carrier absorption; hot carrier effects; laser amplifiers; nonlinear gain; photon densities; semiconductor lasers; transient gain recovery dynamics; ultrashort pulses; wavelength dependence; Absorption; Charge carrier density; Heating; Hot carrier effects; Laser modes; Laser theory; Nonlinear equations; Pulse amplifiers; Semiconductor lasers; Temperature;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.60884
Filename
60884
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