DocumentCode
1384492
Title
How to include the dependency of the RDS(on) of power MOSFETs on the instantaneous value of the drain current into the calculation of the conduction losses of high-frequency three-phase PWM inverters
Author
Kolar, Johann W. ; Ertl, Hans ; Zach, Franz C.
Author_Institution
Power Electron. Sect., Wien Univ., Austria
Volume
45
Issue
3
fYear
1998
fDate
6/1/1998 12:00:00 AM
Firstpage
369
Lastpage
375
Abstract
In this paper, the conduction losses of power MOSFETs are calculated analytically for application in three-phase voltage DC-link pulsewidth modulation (PWM) power converter systems. Contrary to a conventional calculation, the dependency of the turn-on behavior on the drain current is considered in terms of a quadratic approximation. The derived relationships are represented graphically; they can be included directly into the dimensioning of the power transistors
Keywords
DC-AC power convertors; PWM invertors; approximation theory; losses; power MOSFET; power semiconductor switches; semiconductor device models; conduction losses; drain current; on-state resistance; power MOSFETs; power transistor dimensioning; quadratic approximation; three-phase HF PWM inverters; turn-on behavior; Bridge circuits; Leg; MOSFET circuits; Phase modulation; Power MOSFET; Power transistors; Pulse width modulation; Pulse width modulation converters; Pulse width modulation inverters; Voltage;
fLanguage
English
Journal_Title
Industrial Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0278-0046
Type
jour
DOI
10.1109/41.678994
Filename
678994
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