5.2-GHz bandwidth monolithic GaAs optoelectronic receiver

Author

Harder, Christon S. ; Van Zeghbroeck, Bart ; Meier, H. ; Patrick, Willam ; Vettiger, Peter

Author_Institution

IBM, Ruschlikon, Switzerland

Volume

9

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

171

Lastpage

173

Abstract

A high-speed monolithic optoelectronic receiver consisting of a photodetector, a transimpedance amplifier and a 50- Omega output buffer stage has been fabricated using an enhancement/depletion 0.35- mu m recessed-gate GaAs MESFET process. The interdigitated metal-semiconductor-metal photodetector has a dark current of 0.8 nA, a responsivity of 0.2 A/W, and a capacitance of 12 fF. The bandwidth of the receiver is 5.2 GHz with an effective transimpedance of 300 Omega into a 50- Omega load, which corresponds to a transimpedance bandwidth product of 1.5 THz- Omega .<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; photodetectors; receivers; 0.35 micron; 0.8 nA; 5.2 GHz; GaAs; III-V semiconductors; MSM type; dark current; enhancement/depletion devices; high-speed; interdigitated metal-semiconductor-metal photodetector; monolithic optoelectronic receiver; optical communication equipment; output buffer stage; recessed gate MESFET process; transimpedance amplifier; Bandwidth; Capacitance; Etching; Gallium arsenide; MESFETs; Monolithic integrated circuits; Optical amplifiers; Optical interconnections; Optical receivers; Photodetectors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.679

Filename

679