DocumentCode :
1384645
Title :
Effect of a Cr interlayer on properties of CoCrTa/Cr media: experiments and simulations
Author :
Lee, K.J. ; Kim, S.H. ; Shin, K.H. ; Lee, T.D.
Author_Institution :
Dept. of Adv. Mater. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Volume :
32
Issue :
5
fYear :
1996
fDate :
9/1/1996 12:00:00 AM
Firstpage :
3602
Lastpage :
3604
Abstract :
An experimental result and a micromagnetics model of a double layered CoCrTa film separated by a thin flash Cr interlayer are described. In the experiment, coercivity and coercivity squareness drastically changed with an increase in the Cr interlayer thickness. There was some coercivity increase in the double layered films compared to a single layered film when the flash Cr interlayer thickness was around 8 Å to 10 Å and coercivity decreased with further increase of the Cr interlayer thickness up to 50 Å. At a very thin interlayer range, the change of coercivity is affected mainly by the change of exchange interaction. By using the assumption of the formation of a Cr island type interlayer at a thin interlayer region, we can explain the increment of coercivity at the initial state
Keywords :
chromium; chromium alloys; cobalt alloys; coercive force; exchange interactions (electron); ferromagnetic materials; magnetic anisotropy; magnetic multilayers; magnetic recording noise; tantalum alloys; 8 to 50 angstrom; CoCrTa-Cr; CoCrTa/Cr media; Cr interlayer; Cr interlayer thickness; Cr island type interlayer; coercivity; coercivity squareness; double layered CoCrTa film; exchange interaction; initial state; micromagnetics model; thin flash Cr interlayer; very thin interlayer range; Chromium; Coercive force; Magnetic anisotropy; Magnetic noise; Magnetic recording; Magnetic separation; Micromagnetics; Noise reduction; Perpendicular magnetic anisotropy; Saturation magnetization;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.538703
Filename :
538703
Link To Document :
بازگشت