Temperature dependence of polarization characteristics in buried facet semiconductor laser amplifiers

Author

Lin, Mou-Shiung ; Piccirilli, Alfonso B. ; Twu, Yihjye ; Dutta, Nilroy K.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

26

Issue

10

fYear

1990

fDate

10/1/1990 12:00:00 AM

Firstpage

1772

Lastpage

1778

Abstract

The temperature dependence of gain and amplified spontaneous power for both TE and TM modes in semiconductor laser amplifiers are measured. Experiments are performed on three selected amplifier types, with higher TE, higher TM, and equal TE-TM gains, respectively. The gain differences are significantly reduced at higher temperature for the TE-dominant and TM-dominant amplifiers. For amplifiers with equal TE-TM gains, the TE and TM gains remain equal at high temperature. The measurements of the amplified spontaneous power show similar similar characteristics. More importantly, less polarization-sensitive gain characteristics can be obtained with some decrease in maximum gain by raising the operating temperature. The experimental results are explained by using the gain equations of the semiconductor laser amplifier

Keywords

laser modes; laser theory; light polarisation; semiconductor junction lasers; TE gains; TE modes; TE-TM gains; TM gains; TM modes; amplified spontaneous power; buried facet semiconductor laser amplifiers; diode laser gain equations; laser gain temperature dependence; operating temperature; polarization characteristics; polarization-sensitive gain characteristics; Gain measurement; Laser modes; Polarization; Power amplifiers; Power lasers; Power measurement; Semiconductor lasers; Semiconductor optical amplifiers; Tellurium; Temperature dependence;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.60901

Filename

60901