• DocumentCode
    1384824
  • Title

    Effects of pre-existing interfacial defects on the stress profile in aluminum interconnection lines

  • Author

    Shen, Yu-Lin

  • Author_Institution
    Dept. of Mech. Eng., New Mexico Univ., Albuquerque, NM, USA
  • Volume
    21
  • Issue
    1
  • fYear
    1998
  • fDate
    3/1/1998 12:00:00 AM
  • Firstpage
    127
  • Lastpage
    131
  • Abstract
    The profile of thermal stresses in aluminum interconnection lines, with the presence of local debonded areas between the line and the surrounding dielectric, is studied numerically. Local interfacial debonding is presumably due to contamination during the line patterning process. Various geometrical features of the interconnect and the debond segment are assumed, and the resulting stress fields are examined through two-dimensional (2-D) and three-dimensional (3-D) finite element analyses. It is found that interfacial debonding results in a local reduction of stress in aluminum, with the effect becoming larger as the line aspect ratio increases. The location of debond also influences the line stress. Implications of the findings to the interconnect reliability, particularly stress-induced voiding in aluminum lines, are discussed
  • Keywords
    aluminium; finite element analysis; integrated circuit interconnections; integrated circuit reliability; thermal stresses; Al; debond segment; finite element analyses; geometrical features; interconnect reliability; interconnection lines; interfacial debonding; line aspect ratio; line patterning process; local debonded areas; pre-existing interfacial defects; stress fields; stress profile; stress-induced voiding; thermal stresses; Aluminum; Contamination; Dielectrics; Finite element methods; Integrated circuit interconnections; Plasma temperature; Tensile stress; Thermal stresses; Thermomechanical processes; Two dimensional displays;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9886
  • Type

    jour

  • DOI
    10.1109/95.679042
  • Filename
    679042