Title :
Refractive index of direct bandgap semiconductors near the absorption threshold: influence of excitonic effects
Author :
Tanguy, Christian
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
fDate :
10/1/1996 12:00:00 AM
Abstract :
A semi-empirical expression for the refractive index, which takes excitonic effects correctly into account, is given for direct bandgap semiconductors in the vicinity of the absorption threshold. This expression, which can be useful even at low temperatures, is compared with previous models and applied to the case of gallium arsenide
Keywords :
energy gap; excitons; gallium arsenide; light absorption; refractive index; GaAs; absorption threshold; direct bandgap semiconductors; excitonic effects; gallium arsenide; low temperatures; refractive index; semi-empirical expression; Absorption; Dielectric constant; Gallium arsenide; Optical refraction; Optical waveguides; Photonic band gap; Refractive index; Semiconductor waveguides; Telecommunications; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of
