Title :
Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells
Author :
Lifang Xu ; Patel, Dinesh ; Menoni, C.S. ; Pikal, J.M. ; Jeng-Ya Yeh ; Huang, J.Y.T. ; Mawst, L.J. ; Tansu, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated. The PL spectra observed at the early stages of carrier recombination is dominated by two transitions. These two transitions are identified as the first quantized electron state to heavy-hole state (e1-hh1) and electron to light-hole state (e1-lh1) from the analysis of polarized photocurrent measurements in combination with k · p simulation of the band structure. At longer time delays, the dilute-nitride QW exhibits carrier localization at low temperatures and faster recombination time at higher temperatures. The PL dynamics characteristics observed in the InGaAsN QW are different from those measured from the InGaAs QW.
Keywords :
III-V semiconductors; arsenic compounds; electron-hole recombination; gallium compounds; indium compounds; photoconductivity; photoluminescence; semiconductor quantum wells; InGaAsN; carrier recombination dynamics; first quantized electron state; heavy hole state; light hole state; photoluminescence; polarized photocurrent measurement; strain compensated quantum well; temperature 10 K to 300 K; wavelength 1300 nm; Gallium arsenide; Indium gallium arsenide; Laser excitation; Photoconductivity; Quantum wells; Radiative recombination; Temperature measurement; 1.3-$muhbox{m}$ lasers; InGaAsN quantum well (QW); carrier localization; carrier recombination dynamics; hole leakage;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2012.2233465
