Title :
Single-mode operation of mushroom structure surface emitting lasers
Author :
Yang, Y.J. ; Dziura, T.G. ; Wang, S.C. ; Du, G. ; Wang, S.
Author_Institution :
Lockheed Palo Alto Res. Lab., CA, USA
Abstract :
Mushroom structure vertical cavity surface emitting lasers with a 0.6- mu m GaAs active layer sandwiched by two Al/sub 0.6/Ga/sub 0.4/As-Al/sub 0.08/Ga/sub 0.92/As multilayers as top and bottom mirrors are discussed. The lasers exhibit a 15-mA pulses threshold current at 880 nm. Single longitudinal and single transverse mode operation was achieved on lasers with a 5- mu m-diameter active region of current levels near 2*l/sub th/. The light output above threshold current was linearly polarized with a polarization ratio of 25:1.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser modes; semiconductor junction lasers; 0.6 micron; 15 mA; 5 micron; 880 nm; AlGaAs-GaAs-AlGaAs; active layer; current levels; light output; linearly polarized; mirrors; multilayers; mushroom structure surface emitting lasers; polarization ratio; pulses threshold current; single longitudinal mode operation; single transverse mode operation; vertical cavity; Artificial intelligence; Etching; Fabrication; Gallium arsenide; Laser modes; Mirrors; Optical polarization; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
