Title :
Vertically integrated silicon-on-insulator waveguides
Author :
Soref, R.A. ; Cortesi, E. ; Namavar, F. ; Friedman, L.
Author_Institution :
Rome Air Dev. Center, Hanscom AFB, MA, USA
Abstract :
A SiO/sub 2/-Si-SiO/sub 2/-Si-SiO/sub 2/-Si structure produced by the separation by implantation of oxygen (SIMOX) process used for dual vertically integrated waveguiding in silicon at lambda =1.3 mu m is discussed. Independent waveguiding is observed when 2- mu m-thick Si cores are separated by 0.36- mu m-thick SiO/sub 2/. Coupled waveguiding is found for an 0.12- mu m intercore oxide thickness.<>
Keywords :
elemental semiconductors; integrated optics; optical waveguides; optical workshop techniques; silicon; silicon compounds; 0.12 micron; 0.36 micron; 1.3 micron; 2 micron; SIMOX; Si cores; Si-on-insulator waveguides; SiO/sub 2/-Si-SiO/sub 2/-Si-SiO/sub 2/-Si structure; coupled waveguiding; dual vertically integrated waveguiding; intercore oxide thickness; separation by implantation of oxygen; vertical integration; Annealing; Directional couplers; Epitaxial growth; Integrated optics; Nonhomogeneous media; Optical coupling; Optical waveguides; Silicon on insulator technology; Substrates; Tellurium;
Journal_Title :
Photonics Technology Letters, IEEE
