DocumentCode
1385386
Title
A new structure for high-power TW-SLA (Travelling wave semiconductor laser amplifier)
Author
Bendelli, G. ; Komori, K. ; Arai, S. ; Suematsu, Y.
Volume
3
Issue
1
fYear
1991
Firstpage
42
Lastpage
44
Abstract
A structure utilizing an exponential tapered active layer to improve the saturation output power and quantum efficiency of a traveling-wave semiconductor laser amplifier is discussed. Both the spatial distributions of the carrier density and the optical field are considered in the analysis. It is shown that an optimum taper geometry for maximizing the efficiency exists and that this structure provides simultaneous improvement in the saturation output power (7 dB) and the quantum efficiency (1.5 times) compared to a conventional device.<>
Keywords
laser theory; optical saturation; semiconductor junction lasers; carrier density; exponential tapered active layer; optical field; optimum taper geometry; quantum efficiency; saturation output power; traveling-wave semiconductor laser amplifier; Charge carrier density; High power amplifiers; Optical saturation; Optical waveguides; Power amplifiers; Power generation; Refractive index; Semiconductor lasers; Semiconductor optical amplifiers; Waveguide lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.68042
Filename
68042
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