DocumentCode :
1385386
Title :
A new structure for high-power TW-SLA (Travelling wave semiconductor laser amplifier)
Author :
Bendelli, G. ; Komori, K. ; Arai, S. ; Suematsu, Y.
Volume :
3
Issue :
1
fYear :
1991
Firstpage :
42
Lastpage :
44
Abstract :
A structure utilizing an exponential tapered active layer to improve the saturation output power and quantum efficiency of a traveling-wave semiconductor laser amplifier is discussed. Both the spatial distributions of the carrier density and the optical field are considered in the analysis. It is shown that an optimum taper geometry for maximizing the efficiency exists and that this structure provides simultaneous improvement in the saturation output power (7 dB) and the quantum efficiency (1.5 times) compared to a conventional device.<>
Keywords :
laser theory; optical saturation; semiconductor junction lasers; carrier density; exponential tapered active layer; optical field; optimum taper geometry; quantum efficiency; saturation output power; traveling-wave semiconductor laser amplifier; Charge carrier density; High power amplifiers; Optical saturation; Optical waveguides; Power amplifiers; Power generation; Refractive index; Semiconductor lasers; Semiconductor optical amplifiers; Waveguide lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.68042
Filename :
68042
Link To Document :
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