• DocumentCode
    1385399
  • Title

    Electrical and Magnetic Properties of Higher Manganese Silicide Nanostructures

  • Author

    Kang, Sungmu ; Brewer, Greg ; Sapkota, Keshab R. ; Pegg, Ian.L. ; Philip, John

  • Author_Institution
    Vitreous State Lab., Catholic Univ. of America, Washington, DC, USA
  • Volume
    11
  • Issue
    3
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    437
  • Lastpage
    440
  • Abstract
    Higher manganese silicide, Mn15Si26, nanostructures were grown using CVD using a coordination compound precursor. These nanostructures exhibit p-type semiconducting behavior. They also exhibit a nonzero magnetic moment even at room temperature and the magnetic transition temperature appears to be near 330 K.
  • Keywords
    chemical vapour deposition; magnetic moments; magnetic semiconductors; magnetic thin films; magnetic transition temperature; magnetoelastic effects; manganese compounds; nanomagnetics; nanostructured materials; CVD; Mn15Si26; coordination compound precursor; electrical properties; magnetic properties; magnetic transition temperature; manganese silicide nanostructures; nonzero magnetic moment; p-type semiconducting behavior; temperature 293 K to 298 K; temperature 330 K; Diffraction; Manganese; Nanowires; Silicides; Silicon; Substrates; CVD; nanostructured materials; semiconductor nanostructures; silicides;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2011.2177471
  • Filename
    6092499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1385399