Numerical and Experimental Investigation of Single Event Effects in SOI Lateral Power MOSFETs

Author

Shea, Patrick M. ; Shen, Z. John

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA

Volume

58

Issue

6

fYear

2011

Firstpage

2739

Lastpage

2747

Abstract

150 V SOI lateral power MOSFETs were designed and fabricated with features intended to provide hardness against SEB and SEGR. The response of SOI power MOSFETs to heavy ion radiation was investigated both experimentally and using TCAD simulations. These power MOSFETs demonstrated an electrical performance figure of merit Q_GD × R_DSON considerably improved over state of the art commercial trench VDMOS and rad-hard planar VDMOS devices, and survived heavy ion irradiation at the full V_DS biasing of 150 V and full V_GS biasing of -16 V simultaneously.

Keywords

ion beam effects; power MOSFET; radiation hardening (electronics); silicon-on-insulator; SEB; SEGR; SOI lateral power MOSFET; Si; TCAD simulations; art commercial trench VDMOS; electrical performance; experimental investigation; ion radiation; rad-hard planar VDMOS devices; single event effects; voltage -16 V; voltage 150 V; Annealing; Leakage current; Logic gates; MOSFETs; Radiation effects; Sensitivity; Silicon on insulator technology; Heavy ions; LDMOS; power devices; radiation effects; single event burnout; single event gate rupture;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2172956

Filename

6092521