• DocumentCode
    1385666
  • Title

    Thin-film, accumulation-mode p-channel SOI MOSFETs

  • Author

    Colinge, J.D.

  • Author_Institution
    Hewlett Packard CT R&D, Palo Alto, CA
  • Volume
    24
  • Issue
    5
  • fYear
    1988
  • fDate
    3/3/1988 12:00:00 AM
  • Firstpage
    257
  • Lastpage
    258
  • Abstract
    Electrical characteristics of thin-film (100 nm), accumulation-mode SOI p-channel MOSFETs are reported and compared to simulation. In the OFF regime, the p-type channel is fully depleted. As a result, very low values of leakage current are obtained. Very good threshold voltage control is also obtained
  • Keywords
    insulated gate field effect transistors; thin film transistors; SIMOX wafers; SOI MOSFETs; Si; TFT; accumulation-mode; leakage current; p-channel; simulation; thin film transistors; threshold voltage control;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5642
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1385666