DocumentCode
1385686
Title
Some remarks on the temperature dependence of α in point contact transistors
Author
Hunter, L.P. ; Fleisher, H. ; Irish, C.G.
Author_Institution
International Business Machines Corporation Poughkeepsie, New York
Issue
1
fYear
1952
Firstpage
25
Lastpage
30
Abstract
A number of suggestions have been made concerning the current gain of point contact transistors. The P-N hook theory and the trap theory have been considered in most detail. It has been our purpose in the work described here to differentiate between the effects of these two mechanisms and show their relation to the current gain of typical point contact transistors.
Keywords
Business; Charge carrier processes; Equations; Sparks; Temperature; Temperature dependence; Transistors;
fLanguage
English
Journal_Title
Electron Devices, Transactions of the IRE Professional Group on
Publisher
ieee
ISSN
0197-6370
Type
jour
DOI
10.1109/IREPGED.1952.6811055
Filename
6811055
Link To Document