DocumentCode :
1385686
Title :
Some remarks on the temperature dependence of α in point contact transistors
Author :
Hunter, L.P. ; Fleisher, H. ; Irish, C.G.
Author_Institution :
International Business Machines Corporation Poughkeepsie, New York
Issue :
1
fYear :
1952
Firstpage :
25
Lastpage :
30
Abstract :
A number of suggestions have been made concerning the current gain of point contact transistors. The P-N hook theory and the trap theory have been considered in most detail. It has been our purpose in the work described here to differentiate between the effects of these two mechanisms and show their relation to the current gain of typical point contact transistors.
Keywords :
Business; Charge carrier processes; Equations; Sparks; Temperature; Temperature dependence; Transistors;
fLanguage :
English
Journal_Title :
Electron Devices, Transactions of the IRE Professional Group on
Publisher :
ieee
ISSN :
0197-6370
Type :
jour
DOI :
10.1109/IREPGED.1952.6811055
Filename :
6811055
Link To Document :
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