Title :
Capacitance reconstruction from measured C-V in high leakage, nitride/oxide MOS
Author :
Choi, Chang-Hoon ; Wu, Yider ; Goo, Jung-Suk ; Yu, Zhiping ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
10/1/2000 12:00:00 AM
Abstract :
A reconstruction technique of the gate capacitance from anomalous capacitance-voltage (C-V) curves in high leakage dielectric MOSFETs is presented. An RC network is used to accommodate the distributed nature of MOSFETs and an optimization technique is applied to extract the intrinsic gate capacitance. Applicability of the method is demonstrated for ultra-thin nitride/oxide (N/O ~1.4 nm/0.7 nm) composite dielectric MOSFETs
Keywords :
MOSFET; capacitance; dielectric thin films; equivalent circuits; leakage currents; optimisation; semiconductor device models; tunnelling; 0.7 nm; 1.4 nm; RC network; anomalous C-V curves; capacitance reconstruction; capacitance-voltage curves; gate capacitance; high leakage dielectric MOSFETs; high leakage nitride/oxide MOS; measured C-V; optimization technique; ultra-thin nitride/oxide structure; CMOS technology; Capacitance measurement; Capacitance-voltage characteristics; Circuits; Dielectric measurements; Electrical resistance measurement; MOSFETs; Parasitic capacitance; Thickness measurement; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
