Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs

Author

Abramo, Antonio ; Cardin, Andrew ; Selmi, Luca ; Sangiorgi, Enrico

Author_Institution

DIEGM, Udine Univ., Italy

Volume

47

Issue

10

fYear

2000

fDate

10/1/2000 12:00:00 AM

Firstpage

1858

Lastpage

1863

Abstract

A solver for the two-dimensional (2-D) Schrodinger equation based on the k-space representation of the solution has been developed and applied to the simulation of 2-D electrostatic quantum effects in nano-scale MOS transistors. This paper presents the mathematical framework of the simulator, addresses the related accuracy and efficiency problems, and discusses the simulations performed to validate it. Furthermore, the 2-D quantum effects observed in the simulation of charge densities in tens-hundreds nanometer scale MOS structures are described

Keywords

MOSFET; Schrodinger equation; electric charge; elemental semiconductors; nanotechnology; semiconductor device models; silicon; 2D Schrodinger equation; 2D electrostatic quantum effects; 2D quantum mechanical simulation; Si; Si MOSFETs; charge densities; charge distribution; k-space representation; nano-scale MOS transistors; Computational modeling; Distributed computing; Effective mass; MOSFETs; Quantization; Quantum computing; Quantum mechanics; Schrodinger equation; Silicon; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.870562

Filename

870562